Magnetic Anticrossing of 1D Subbands in Coupled Ballistic Double Quantum Wires [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 2000.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 6 pages : digital, PDF file
- Additional Creators:
- Sandia National Laboratories
United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- We study the low-temperature in-plane magnetoconductance of vertically coupled double quantum wires. Using a novel flip-chip technique, the wires are defined by two pairs of mutually aligned split gates on opposite sides of a s 1 micron thick AlGaAs/GaAs double quantum well heterostructure. We observe quantized conductance steps due to each quantum well and demonstrate independent control of each ID wire. A broad dip in the magnetoconductance at -6 T is observed when a magnetic field is applied perpendicular to both the current and growth directions. This conductance dip is observed only when 1D subbands are populated in both the top and bottom constrictions. This data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of 1D subbands.
- Published through SciTech Connect.
Surfaces and Interfaces of Mesoscopic Devices Conference (SIMD), Kaanapali, Maui, HI (US), 12/05/1999--12/10/1999.
WENDT,JOEL R.; SIMMONS,JERRY A.; RENO,JOHN L.; LYO,SUNGKWUN K.; MOON,JEONG-SUN; BLOUNT,MARK A.
- Funding Information:
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