Actions for Orbitronics [electronic resource] : the Intrinsic Orbital Hall Effect in p-Doped Silicon

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Orbitronics [electronic resource] : the Intrinsic Orbital Hall Effect in p-Doped Silicon

Published
Washington, D.C. : United States. Dept. of Energy, 2010.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
4 pages : digital, PDF file
Additional Creators
Stanford Linear Accelerator Center, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
The spin Hall effect depends crucially on the intrinsic spin-orbit coupling of the energy band. Because of the smaller spin-orbit coupling in silicon, the spin Hall effect is expected to be much reduced. We show that the electric field in p-doped silicon can induce a dissipationless orbital current in a fashion reminiscent of the spin Hall effect. The vertex correction due to impurity scattering vanishes and the effect is therefore robust against disorder. The orbital Hall effect can lead to the accumulation of local orbital momentum at the edge of the sample, and can be detected by the Kerr effect.
Report Numbers
E 1.99:slac-pub-13910
slac-pub-13910
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Note
Published through SciTech Connect.
01/15/2010.
"slac-pub-13910"
Submitted to Physical Review Letters FT
Zhang, Shou-Cheng; Bernevig, B.Andrei; Hughes, Taylor L.
Funding Information
AC02-76SF00515
View MARC record | catkey: 13821238