PROBING STRESS EFFECTS IN SINGLE CRYSTAL ORGANIC TRANSISTORS BY SCANNING KELVIN PROBE MICROSCOPY [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 2010. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
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- 203,305 : digital, PDF file
- Additional Creators:
- United States. Department of Energy. Savannah River Site, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- We report scanning Kelvin probe microscopy (SKPM) of single crystal difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic transistors. SKPM provides a direct measurement of the intrinsic charge transport in the crystals independent of contact effects and reveals that degradation of device performance occurs over a time period of minutes as the diF-TESADT crystal becomes charged.
- Published through SciTech Connect., 06/11/2010., "srnl-sti-2010-00346", Applied Physics Letters 96 20 ISSN 0003-6951 FT, and Teague, L.
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