Using nanoscale transistors to measure single donor spins in semiconductors [electronic resource].
- Berkeley, Calif. : Lawrence Berkeley National Laboratory, 2008. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 4 : digital, PDF file
- Additional Creators:
- Lawrence Berkeley National Laboratory and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- We propose a technique for measuring the state of a single donor electron spin usinga field-effect transistor induced two-dimensional electron gas and electrically detected magnetic resonance techniques. The scheme is faciltated by hyperfine coupling to the donor nucleus. We analyze the potential sensitivity and outlne experimental reqiurements. Our measurement provides a single-shot, projective, and quantum non-demoltion measurement of an electron-encoded qubit state.
- Published through SciTech Connect., 12/01/2008., "lbnl-2199e", Quantum Communication, Measurement and Computing (QCMC), The Ninth International Conference, 2008, Calgary, Canada, 19-24 August 2008., Young, K. C.; Schenkel, Thomas; Whaley, K. B.; Sarovar, M., Accelerator&, and Fusion Research Division
- Funding Information:
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