Radiation tolerance of prototype BTeV pixel detector readout chips [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy. Office of Energy Research, 2002.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:: 115 Kilobytes pages : digital, PDF file
Additional Creators:: Fermi National Accelerator Laboratory, United States. Department of Energy. Office of Energy Research, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

High energy and nuclear physics experiments need tracking devices with increasing spatial precision and readout speed in the face of ever-higher track densities and increased radiation environments. The new generation of hybrid pixel detectors (arrays of silicon diodes bump bonded to arrays of front-end electronic cells) is the state of the art technology able to meet these challenges. We report on irradiation studies performed on BTeV pixel readout chip prototypes exposed to a 200 MeV proton beam at Indiana University Cyclotron Facility. Prototype pixel readout chip preFPIX2 has been developed at Fermilab for collider experiments and implemented in standard 0.25 micron CMOS technology following radiation tolerant design rules. The tests confirmed the radiation tolerance of the chip design to proton total dose up to 87 MRad. In addition, non destructive radiation-induced single event upsets have been observed in on-chip static registers and the single bit upset cross section has been extensively measured.

Report Numbers:

E 1.99:fermilab-conf-02/147-e
fermilab-conf-02/147-e

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Published through SciTech Connect.
07/12/2002.
"fermilab-conf-02/147-e"
2002 IEEE Nuclear and Space Radiation Effects Conference, Phoenix, AZ (US), 07/15/2002--07/19/2002.
Gabriele Chiodini.

Funding Information:

AC02-76CH03000

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