Toward a Unified Treatment of Electronic Processes in Organic Semiconductors [electronic resource].
- Published:
- Washington, D.C. : United States. Dept. of Energy, 2005.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Physical Description:
- 5 pages : digital, PDF file
- Additional Creators:
- National Renewable Energy Laboratory (U.S.)
United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information - Access Online:
- www.osti.gov
- Summary:
- A quantitative study of n-type doping in highly crystalline organic semiconductor films establishes the predominant influence of electrostatic forces in these low-dielectric materials. Based on these findings, a self-consistent model of doped (purposely or not) organic semiconductors is proposed in which: (1) the equilibrium free carrier density, nf, is a small fraction of the total charge density; (2) a superlinear increase in conductivity with doping density is universal; (3) nf increases with applied electric field; and (4) the carrier mobility is field-dependent regardless of crystallinity.
- Subject(s):
- Note:
- Published through SciTech Connect.
01/01/2005.
"nrel/cp-590-37617"
Gregg. B.A. - Funding Information:
- AC36-99-GO10337
View MARC record | catkey: 13825361