Toward a Unified Treatment of Electronic Processes in Organic Semiconductors [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 2005.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 5 pages : digital, PDF file
- Additional Creators:
- National Renewable Energy Laboratory (U.S.)
United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- A quantitative study of n-type doping in highly crystalline organic semiconductor films establishes the predominant influence of electrostatic forces in these low-dielectric materials. Based on these findings, a self-consistent model of doped (purposely or not) organic semiconductors is proposed in which: (1) the equilibrium free carrier density, nf, is a small fraction of the total charge density; (2) a superlinear increase in conductivity with doping density is universal; (3) nf increases with applied electric field; and (4) the carrier mobility is field-dependent regardless of crystallinity.
- Published through SciTech Connect.
- Funding Information:
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