Electrochemical sulfur passivation of visible ({approximately}670nm) AlGaInP lasers [electronic resource].
- Published:
- Washington, D.C. : United States. Dept. of Energy, 1993. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 15 pages : digital, PDF file
- Additional Creators:
- Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- Access Online:
- www.osti.gov
- Summary:
- III-V based devices such as FETs, HBTs and lasers often have surface leakage and thermal degradation problems due to surface states which pin the Fermi level to the mid-gap. Sulfur based passivation processes are known to improve device performance by altering surface-state densities. The authors have developed a voltage-controlled anodic sulfur passivation scheme using Na₂S dissolved in ethylene glycol. Their process has repeatedly produced a ∼25% improvement in peak output power near the catastrophic damage limit in visible (λ = 670 nm) AlGaInP edge-emitting lasers. The threshold current density and electrical characteristics were unchanged after catastrophic failure indicating that passivation raises the threshold for facet damage.
- Subject(s):
- Note:
- Published through SciTech Connect., 11/01/1993., "sand--93-1127c", " conf-9311104--6", "DE94002293", 40. national symposium of the American Vacuum Society (AVS),Orlando, FL (United States),15-19 Nov 1993., and Schneider, R.P.; Lott, J.A.; Howard, A.J.; Ashby, C.I.H.; Corless, R.F.
- Funding Information:
- AC04-94AL85000
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