Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2 [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy, 1985.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Additional Creators:: National Renewable Energy Laboratory (U.S.), United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

Report Numbers:

E 1.99:us re31,968
us re31,968

Subject(s):

Solar Energy

Other Subject(s):

Methods Forming Thin-Film Heterojunction Solar Cells I-Iii-Vi Improved Thin-Film Solar Cell Methods Forming Relatively Light-To-Electrical Energy Conversion Efficiency Characterized Cell Comprises P-N Type Heterojunction Formed Semiconductor Layer Comprising Photovoltaic Active Material Selected I-Iii-Vi Chalcopyrite Ternary Materials Vacuum Deposited Composition-Graded Layer Ranging Microns Microns Congruent Congruent Region Photovoltaic Active Material Preferably Comprises Resistivity Region P-Type Semiconductor Material Superimposed Region Relatively Resistivity Transient N-Type Semiconductor Material Defining Transient P-N Homojunction Ii Semiconductor Layer Comprising Resistivity N-Type Semiconductor Material Interdiffusion Elemental Constituents Discrete Juxtaposed Regions Semiconductor Layer Defining Transient P-N Homojunction Layer Transient N-Type Material Semiconductor Layer N-Type Semiconductor Layer Causes Government Rights Pursuant Contract Eg-77-C-01-4042 Subcontract Xj-9-8021-1 Awarded Department Energy Transient P-N Transient P-N Photovoltaic Active Photovoltaic Active P-N Homojunction P-N Homojunction N-Type Material Material Defining Layer Comprising Layer Comprising N-Type Semiconductor N-Type Semiconductor N-Type Semiconductor Heterojunction Solar Cell Comprises Conversion Efficiency Active Material Active Material Electrical Energy Solar Cell Solar Cell Semiconductor Material Semiconductor Material Semiconductor Material Solar Cells Semiconductor Layer Semiconductor Layer Semiconductor Layer Semiconductor Layer Semiconductor Layer Energy Conversion Preferably Comprises Material Selected Material Preferably Transient N-Type Transient N-Type P-Type Semiconductor Vacuum Deposited Resistivity N-Type Resistivity Region Ternary Materials Thin-Film Heterojunction Juxtaposed Regions Light-To-Electrical Energy Junction Solar Chalcopyrite Ternary Film Heterojunction Elemental Constituents Superimposed Region Forming Thin-Film Layer Ranging Layer Defining Discrete Juxtaposed Type Heterojunction Homojunction Layer Heterojunction Formed Improved Thin-Film Type Material Type Semiconductor Type Semiconductor Type Semiconductor Type Semiconductor Preferably Comprise Solar Cells Design Fabrication Energy Efficiency Vacuum Coating P-N Junctions N-Type Conductors

Note:

Published through SciTech Connect.
08/13/1985.
"us re31,968"
Mickelsen, Reid A; Chen, Wen S.

Funding Information:

EG-77-C-01-4042

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