Actions for Temperature-induced martensite in magnetic shape memory Fe{sub 2}MnGa observed by photoemission electron microscopy [electronic resource].

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Temperature-induced martensite in magnetic shape memory Fe{sub 2}MnGa observed by photoemission electron microscopy [electronic resource].

Published
Berkeley, Calif. : Lawrence Berkeley National Laboratory. Advanced Light Source, 2012.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
032,401 : digital, PDF file
Additional Creators
Lawrence Berkeley National Laboratory, Lawrence Berkeley National Laboratory. Advanced Light Source, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
The magnetic domain structure in single crystals of a Heusler shape memory compound near the composition Fe₂MnGa was observed during phase transition by photoelectron emission microscopy at Beamline 11.0.1.1 of the Advanced Light Source. The behavior is comparable with recent observations of an adaptive martensite phase in prototype Ni₂MnGa, although the pinning in the recent work is an epitaxial interface and in this work the e ective pinning plane is a boundary between martensitic variants that transform in a self-accommodating way from the single crystal austenite phase present at high temperatures. Temperature dependent observations of the twinning structure give information as to the coupling behavior between the magnetism and the structural evolution.
Report Numbers
E 1.99:lbnl-5382e
lbnl-5382e
Subject(s)
Note
Published through SciTech Connect.
01/18/2012.
"lbnl-5382e"
Applied Physics Letters 100 3 ISSN 0003-6951 FT
Scholl, Andreas; Elmers, Hans-Joachim; Kainuma, R.; Jenkins, Catherine; Omori, Toshihiro.
Funding Information
DE-AC02-05CH11231
View MARC record | catkey: 14061047