Actions for Electronic Excitations and Metal-Insulator Transition inPoly(3-hexylthiophene) Organic Field-Effect Transistors [electronic resource].

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Electronic Excitations and Metal-Insulator Transition inPoly(3-hexylthiophene) Organic Field-Effect Transistors [electronic resource].

Published
La Jolla, Calif. : University of California, San Diego, 2006.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Additional Creators
University of California, San Diego and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
We carry out a comprehensive theoretical and experimentalstudy of charge injection in poly(3-hexylthiophene) (P3HT) to determinethe most likely scenario for metal-insulator transition in this system.Wecalculate the optical-absorption frequencies corresponding to a polaronand a bipolaron lattice in P3HT. We also analyze the electronicexcitations for three possible scenarios under which a first- or asecond-order metal-insulator transition can occur in doped P3HT. Thesetheoretical scenarios are compared with data from infrared absorptionspectroscopy on P3HT thin-film field-effect transistors (FETs). Ourmeasurements and theoretical predictions suggest that charge-inducedlocalized states in P3HT FETs are bipolarons and that the highest dopinglevel achieved in our experiments approaches that required for afirst-order metal-insulator transition.
Report Numbers
E 1.99:lbnl--62717
lbnl--62717
Other Subject(s)
Note
Published through SciTech Connect.
11/07/2006.
"lbnl--62717"
": KC0204016"
Physical Review B 75 FT
Martin, M.C.; Li, Z.Q.; Di Ventra, M.; Basov, D.N.; Sai, N.
Funding Information
DE-AC02-05CH11231
NSF:NSF-0438018
458121
View MARC record | catkey: 14061819