Actions for Ion Implantation with Scanning Probe Alignment [electronic resource].

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Ion Implantation with Scanning Probe Alignment [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 2005.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Additional Creators
United States. Department of Energy, United States. Army Research Office, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
We describe a scanning probe instrument which integrates ion beams with the imaging and alignment function of a piezo-resistive scanning probe in high vacuum. The beam passes through several apertures and is finally collimated by a hole in the cantilever of the scanning probe. The ion beam spot size is limited by the size of the last aperture. Highly charged ions are used to show hits of single ions in resist, and we discuss the issues for implantation of single ions.
Report Numbers
E 1.99:lbnl--58750
lbnl--58750
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Note
Published through SciTech Connect.
07/12/2005.
"lbnl--58750"
": 400403909"
49th International Conference on Electron, Ion,and Photon Beam Technology and Nanofrabrication (EIPBN2005), Orlando, FL,May 31-June 3, 2005.
Liddle, J.A.; Bokor, J.; Schenkel, T.; Persaud, A.; Rangelow, I.W.; Ivanov, Tzv.
Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
Funding Information
DE-AC02-05CH11231
43GW03
View MARC record | catkey: 14062248