X-RAY PHOTOEMISSION ANALYSIS OF PASSIVATED Cd(1-x)ZnxTe SURFACES FOR IMPROVED RADIATION DETECTORS [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy, 2008.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:: PDF-file: 12 pages; size: 0.2 Mbytes
Additional Creators:: Lawrence Berkeley National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

Surface passivation of device-grade CdZnTe was investigated using x-ray photoelectron spectroscopy in combination with transport property measurements after Br-MeOH (2% Br) and KOH/NH₄F/H₂O₂ solutions were used to etch and oxidize the surface. High-resolution photoemission measurements on the valence band electronic structure and core lines were used to evaluate the surface chemistry of the chemically treated surfaces. Metal overlayers were then deposited on these chemically treated surfaces and the I-V characteristics measured. The measurements were correlated to understand the effect of interface chemistry on the electronic structure at these interfaces with the goal of optimizing the Schottky barrier height for radiation detector devices.

Report Numbers:

E 1.99:llnl-jrnl-404009
llnl-jrnl-404009

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Note:

Published through SciTech Connect.
05/12/2008.
"llnl-jrnl-404009"
Materials Letters, vol. 63, no. 2, January 31, 2009, pp. 180 63 2 ISSN 0167-577X; MLETDJ FT
Nelson, A; Payne, S; Conway, A; Ferreira, J; Reinhardt, C; Nikolic, R.

Funding Information:

W-7405-ENG-48

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