Uranium passivation by C+ implantation [electronic resource] : a photoemission and secondary ion mass spectrometry study
- Washington, D.C. : United States. Dept. of Energy, 2005. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- PDF-file: 28 pages; size: 2.6 Mbytes
- Additional Creators:
- Lawrence Berkeley National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Implantation of 33 keV C⁺ ions into polycrystalline U²³⁸ with a dose of 4.3 x 10¹⁷ cm⁻² produces a physically and chemically modified surface layer that prevents further air oxidation and corrosion. X-ray photoelectron spectroscopy and secondary ion mass spectrometry were used to investigate the surface chemistry and electronic structure of this C⁺ ion implanted polycrystalline uranium and a non-implanted region of the sample, both regions exposed to air for more than a year. In addition, scanning electron microscopy was used to examine and compare the surface morphology of the two regions. The U 4f, O 1s and C 1s core-level and valence band spectra clearly indicate carbide formation in the modified surface layer. The time-of-flight secondary ion mass spectrometry depth profiling results reveal an oxy-carbide surface layer over an approximately 200 nm thick UC layer with little or no residual oxidation at the carbide layer/U metal transitional interface.
- Published through SciTech Connect., 01/20/2005., "ucrl-jrnl-210877", Surface Science 600 6 ISSN 0039-6028; SUSCAS FT, and Nelson, A J; Evans, C; McLean, W; Felter, T E; Siekhaus, W; Wu, K J; Ferreira, J.
- Funding Information:
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