Soft X-ray photoemission studies of Hf oxidation [electronic resource].

Published: Washington, D.C. : United States. Dept. of Energy, 2002.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description: vp : digital, PDF file
Additional Creators: Lawrence Berkeley National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary

Soft X-Ray Photoemission Spectroscopy using surface sensitive Synchrotron Radiation has been applied to accurately determine the binding energy shifts and the valence band offset of the HfO2 grown on Hf metal. Charging of oxide films under x-rays (or other irradiation) is circumvented by controlled and sequential in-situ oxidation. Photoemission results show the presence of metallic Hf (from the substrate) with the 4f7/2 binding energy of 14.22 eV, fully oxidized Hf (from HfO2) with the 4f7/2 binding energy of 18.16 eV, and at least one clear suboxide peak. The position of the valence band of HfO2 with respect to the Hf(m) Fermi level is determined as 4.05 eV.

Report Numbers

E 1.99:lbnl--50832
lbnl--50832

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Published through SciTech Connect.
02/01/2002.
"lbnl--50832"
Journal of Vacuum Science & Technology A - Vacuum Surfaces and Films 21 1 FT
Hussain, Z.; Hamdan, N.M.; Banaszak Holl, M.M.; Garfunkel, E.; Suzer, S.; Sayan, S.

Funding Information

AC03-76SF00098
A580SS

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