Actions for Indium donor complexes with cation vacancies in CdTe and ZnSe [electronic resource].

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Indium donor complexes with cation vacancies in CdTe and ZnSe [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1993.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
6 pages : digital, PDF file
Additional Creators
Oregon State University, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Very dilute (10₁₂ cm{sup −3}) indium donors in CdTe and ZnSe powders and in CdTe single crystals were investigated using ¹¹¹In Perturbed angular correlation spectroscopy. Most indium atoms are in uncomplexed sites but can form weakly-bound complexes with native defects in very defective material. The only complex observed in CdTe is an indium-Cd vacancy pair. The CdTe in which these pairs occur is apparently n-type, most Cd vacancies are free and doubly-charged, and the binding energy with indium is 0.15 eV. In ZnSe, indium can pair with a Zn vacancy or with some other presently unidentified defect. These complexes form in ZnSe containing large concentrations of both free Zn vacancies and complexes of Zn vacancies with other defects. In CdTe, the pair formation equilibration time constant is two days at 15C,an implication that Cd vacancies are mobile at room temperature. Lattice relaxation around a Cd vacancy in CdTe was probed by single crystal PAC experiments.
Report Numbers
E 1.99:doe/er/45191--23
E 1.99: conf-9307124--3
conf-9307124--3
doe/er/45191--23
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Note
Published through SciTech Connect.
11/01/1993.
"doe/er/45191--23"
" conf-9307124--3"
"DE94002731"
"KC0101010/KC0201010"
17. international conference on defects in semiconductors,Gmunden (Austria),18-23 Jul 1993.
Griffith, J.W.; Gardner, J.A.; Furdyna, J.K.; Platzer, R.; Karczewski, G.; Lundquist, R.
Funding Information
FG06-85ER45191
View MARC record | catkey: 14063149