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Implantation of carbon in GaAs [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1992.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
82 pages : digital, PDF file
Additional Creators
Lawrence Berkeley National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Carbon implanted into GaAs and thermally annealed typically exhibits very low (<3%) electrical activity. It has been demonstrated that the electrical activity of C can be significantly enhanced by co-implantation with Ga. Improved activation may result from either additional damage of the crystal lattice or from stoichiometric changes, forcing the C atoms onto As sites. To determine the relative importance of each of these effects, I have undertaken a systematic study of carbon activation in GaAs. A range of co-implants have been used: group III (B, Ga), group V (N, P, As) and noble gases (Ar, Kr). The damage introduced to the substrate will depend on the mass of the ion implanted. The group III and group V co-implants will affect the crystal stoichiometry. The results indicate that both lattice damage and crystal stoichiometry are important for high electrical activity of C. Increasing the damage will increase the activation due to the increased number of As vacancies but maximum activation can be obtained only by a co-implant which not only damages the lattice but also forces the C to occupy an As site.
Report Numbers
E 1.99:lbl--32253
lbl--32253
Subject(s)
Other Subject(s)
Dissertation Note
Thesis (M.S.); PBD: Mar 1992
Note
Published through SciTech Connect.
03/01/1992.
"lbl--32253"
"DE92016921"
Moll, A.J.
Funding Information
AC03-76SF00098
View MARC record | catkey: 14063372