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Subpicosecond Raman study of hot electrons and hot phonons in GaAs [electronic resource].

Published:
Washington, D.C : United States. Dept. of Energy. Office of Energy Research, 1990.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:
Pages: (12 pages) : digital, PDF file
Additional Creators:
Lawrence Berkeley National Laboratory, United States. Department of Energy. Office of Energy Research, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary:
In this paper we will describe in detail the use of Raman scattering with subpicosecond laser pulses for investigating both the Frohlich interactions between electrons and LO phonons and the intervalley electron-phonon interactions. 19 refs., 6 figs.
Report Numbers:
E 1.99:lbl-29174
E 1.99: conf-9003190--1
conf-9003190--1
lbl-29174
Subject(s):
Other Subject(s):
Note:
Published through SciTech Connect.
03/01/1990.
"lbl-29174"
" conf-9003190--1"
"DE90015634"
NATO advanced workshop on light scattering in semiconductors and microstructures, Quebec (Canada), 5-9 Mar 1990.
Kim, D.S.; Yu, P.Y.
Funding Information:
AC03-76SF00098
View MARC record | catkey: 14063559