Response of a Nb/Al[sub 2]O[sub 3]/Nb tunnel junction to picosecond electrical pulses [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 1992.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- Pages: (5 pages) : digital, PDF file
- Additional Creators:
- Lawrence Berkeley National Laboratory
United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- Picosecond electrical pulses were used to measure the broadband quasiparticle response of a Nb trilayer SIS (superconductor-insulator-superconductor) junction in both the linear and nonlinear regimes. The electrical pulses were generated by illuminating a Si photoconducting switch using a Ti-sapphire laser. The SIS response is inferred by measuring the dc current induced by interfering two electrical pulses at the junction, as a function of the time delay between them. Results are obtained for bias voltages of 1.0 and 2.0 mV; at the latter, two-photon absorption was detected.
- Published through SciTech Connect.
Optical Society of America (OSA) meeting on ultrafast optics and optoelectronics, San Francisco, CA (United States), 25-27 Jan 1993.
Richards, P.L.; Barfknecht, A.T.; Mears, C.A.; Orenstein, J.O.; Karadi, C; Verghese, S.
- Funding Information:
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