Surface structure and spectroscopy of charge-density wave materials using scanning tunneling microscopy [electronic resource].
- Published
- Washington, D.C. : United States. Dept. of Energy, 1991.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Physical Description
- Pages: (17 pages) : digital, PDF file
- Additional Creators
- University of Virginia, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
Access Online
- Restrictions on Access
- Free-to-read Unrestricted online access
- Summary
- The Scanning tunneling microscope (STM) has been used to study the effects of Fe doping on the charge-density wave (CDW) structure in NbSe₃ and 1T-TaS₂. In NbSe₃ small amounts of Fe reduce both CDW gaps by 25--30% and change the relative CDW amplitudes of the high and low temperature CDWs. The CDW amplitudes remain strong on all three chains of the surface unit cell with no evident disorder. In 1T-Fe{sub 0.05}Ta{sub 0.95}S₂ the Fe introduces substantial disorder in the CDW pattern, but the local CDW amplitude remains strong. The CDW energy gap is reduced by approximately 50% and the resistive anomaly at the commensurate-incommensurate transition is removed. The STM in both the image and spectroscopy modes can detect subtle changes in CDW structure due to impurities.
- Report Numbers
- E 1.99:doe/er/45072-49
doe/er/45072-49 - Subject(s)
- Other Subject(s)
- Niobium Selenides
- Scanning Electron Microscopy
- Tantalum Sulfides
- Charge Density
- Crystal Doping
- Iron
- Microstructure
- Surfaces
- Wave Propagation
- Chalcogenides
- Crystal Structure
- Electron Microscopy
- Elements
- Metals
- Microscopy
- Niobium Compounds
- Refractory Metal Compounds
- Selenides
- Selenium Compounds
- Sulfides
- Sulfur Compounds
- Tantalum Compounds
- Transition Element Compounds
- Transition Elements
- Note
- Published through SciTech Connect.
01/01/1991.
"doe/er/45072-49"
"DE92007746"
Coleman, R.V.; McNairy, W.W.; Slough, C.G.; Wang, Chen.; Dai, Zhenxi. - Funding Information
- FG05-84ER45072
View MARC record | catkey: 14064197