Study of high {Tc} superconducting thin films grown by MOCVD. Final report, July 1, 1986--April 30, 1990 [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy, 1990.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:: 10 pages : digital, PDF file
Additional Creators:: Georgia Institute of Technology, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

Work is described briefly, which was carried out on development of techniques to grow metal-semiconductor superlattices (artificially layered materials) and on the copper oxide based susperconductors (naturally layered materials). The current growth technique utilized is metalorganic chemical vapor deposition (MOCVD). CdTe, PbTe, La, LaTe, and Bi₂Te₃ were deposited, mostly on GaAs. Several YBa₂Cu₃O₇ compounds were obtained with possible superconductivity at temperatures up to 550 K (1 part in 10⁴). YBa₂Cu₃O{sub 7−x} and Tl₂CaBa₂Cu₂O{sub y} thin films were deposited by MOCVD on common substrates such as glass.

Report Numbers:

E 1.99:doe/er/45266--t3
doe/er/45266--t3

Subject(s):

Other Subject(s):

Note:

Published through SciTech Connect.
12/31/1990.
"doe/er/45266--t3"
"DE93005052"
"G-41-629"
Erbil, A.

Type of Report and Period Covered Note:

Final; 01/01/1986 - 12/31/1990

Funding Information:

FG05-86ER45266

View MARC record | catkey: 14064204