High dose uranium ion implantation into silicon [electronic resource].
- Berkeley, Calif. : Lawrence Berkeley National Laboratory, 1987.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- Pages: 14 : digital, PDF file
- Additional Creators:
- Lawrence Berkeley National Laboratory and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Implantation of uranium ions into silicon to a maximum dose of 6 x 10/sup 16/ atoms/cm/sup 2/, with a maximum concentration of 6 x 10/sup 21/ atoms/cm/sup 3/, has been carried out. This concentration corresponds to 12 at. % of uranium in the silicon host material. The implanted uranium content was measured by Rutherford backscattering and confirmed by a measurement of the alpha-particle activity of the buried uranium layer. The range and straggling of the uranium, and sputtering of the silicon target by uranium, were measured and are compared with theoretical estimates. The implantation was performed at an ion mean energy of 157 keV using a new kind of high current metal ion source.
- Report Numbers:
- E 1.99:lbl-23509
- Published through SciTech Connect.
Galvin, J.E.; Brown, I.G.; Yu, K.M.
- Funding Information:
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