Actions for New III-V cell design approaches for very high efficiency [electronic resource].

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New III-V cell design approaches for very high efficiency [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1993.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
Pages: (53 pages) : digital, PDF file
Additional Creators
United States. Department of Energy and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.
Report Numbers
E 1.99:nrel/tp-451-4851
nrel/tp-451-4851
Subject(s)
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Note
Published through SciTech Connect.
01/01/1993.
"nrel/tp-451-4851"
"DE92010558"
Young, M.P.; Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; O'Bradovich, G.J.
National Renewable Energy Lab., Golden, CO (United States)
Purdue Univ., Lafayette, IN (United States)
Funding Information
AC02-83CH10093
View MARC record | catkey: 14065034