Lattice location of As and Sb implanted in silicon after annealing with a pulsed ruby laser. [Implanted with 100 keV /sup 75/As and /sup 121/Sb] [electronic resource].
- Oak Ridge, Tenn. : Oak Ridge National Laboratory, 1978. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
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- Pages: 8 : digital, PDF file
- Additional Creators:
- Oak Ridge National Laboratory and United States. Department of Energy. Office of Scientific and Technical Information
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- Free-to-read Unrestricted online access
- The lattice location of implanted arsenic and antimony in single crystal silicon ((100) orientation) after pulsed laser annealing was studied using positive ion channeling-backscattering. The samples were implanted with 100 keV /sup 75/As or /sup 121/Sb to doses in the range 1 x 10/sup 15/ to 3 x 10/sup 16//cm/sup 2/ and subsequently annealed using the Q-switched output of a pulsed ruby laser (1.5 to 1.7 J/cm/sup 2/, approx. 50 x 10/sup -9/ sec pulse duration). Channeling measurements (2.5 MeV He/sup +/ ions) along major axial directions ((100), (110), and (111)) and detailed scans across the axes were used to determine the lattice location of the implanted dopants after annealing. In the dose range investigated, 98 to 99% of the As occupy substitutional sites. Antimony doses less than 1.5 x 10/sup 16//cm/sup 2/ yield similar results. Electrical measurements of the number of electrically active dopants support the high substitutional fractions observed by the ion channeling-backscattering measurements. Also reported are channeling results for /sup 75/As implanted (approx. 1 x 10/sup 16/ As/cm/sup 2/) samples that were annealed with an electron beam generator. Substitutional fractions (97 to 99%) comparable to laser annealing were obtained, but some nonuniformities across the samples were observed that were not present in the laser annealed samples.
- Published through SciTech Connect., 12/01/1978., "conf-781167-3", AIP conference on laser-solid interactions and laser processing, Boston, MA, USA, 28 Nov 1978., and Pronko, P.P.; Young, R.T.; Appleton, B.R.; White, C.W.; Wilson, S.R.
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