Production data on 0.55 eV InGaAs thermophotovoltaic cells [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy, 1996.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:: 12 pages : digital, PDF file
Additional Creators:: Knolls Atomic Power Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

Low bandgap 0.55 eV (2.25 {micro}m cutoff wavelength) indium gallium arsenide (In{sub 0.72}Ga{sub 0.28}As) thermophotovoltaic (TPV) cells use much more of the long wavelength energy emitted from low temperature (< 1,200 C) thermal sources than either Si or GaSb cells. Data are presented on a statistically significant number (2,500) of these TPV cells, indicating the performance obtainable in large numbers of cells. This data should be useful in the design and modeling of TPV system performance. At 1.2 A/cm² short-circuit current, an average open-circuit voltage of 283 mV is obtained with a 60% fill factor. The peak external quantum efficiency for uncoated cells is 65% and is over 50% from 1.1 to 2.2 {micro}m. Internal quantum efficiency is over 76% in this range assuming an estimated 34% reflectance loss.

Report Numbers:

E 1.99:kapl-p--000045
E 1.99: conf-960513--
conf-960513--
kapl-p--000045

Subject(s):

Direct Energy Conversion

Other Subject(s):

Note:

Published through SciTech Connect.
05/01/1996.
"kapl-p--000045"
" conf-960513--"
"DE99000444"
25. photovoltaic solar energy conference, Washington, DC (United States), 13-17 May 1996.
Campbell, B.; Colter, P.; Charache, G.; Wojtzuk, S.

Funding Information:

AC12-76SN00052

View MARC record | catkey: 14066966