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Fabrication and electrical characterization of 0.55 eV n-on-p InGaAs thermophotovoltaic devices [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1998.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
11 pages : digital, PDF file
Additional Creators
Knolls Atomic Power Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Results are presented on the characterization and testing of lattice mismatched 0.55 eV InGaAs/InP thermophotovoltaic (TPV) cells. A robust cell fabrication technique amenable to high throughput production is presented. A versatile light and dark I-V set up capable of fast screening of the TPV cells and an innovative approach for screening high performance cells are presented. The authors also report on the effect of lattice matched InAsP and InAlAs back surface field on the performance of the TPV cells.
Report Numbers
E 1.99:kapl-p--000124
E 1.99: k--98168
E 1.99:conf-981055--
conf-981055--
k--98168
kapl-p--000124
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
10/01/1998.
"kapl-p--000124"
" k--98168"
"conf-981055--"
"DE99001630"
4. National Renewable Energy Laboratory (NREL) conference on thermophotovoltaic generation of electricity, Denver, CO (United States), 11-14 Oct 1998.
Eldredge, J.; Takahashi, M.; Al-Jassim, M.M.; Joslin, D.; Haddad, M.; Narayanan, A.; Krut, D.; Karam, N.H.; Nishikawa, W.
Funding Information
AC12-76SN00052
View MARC record | catkey: 14067024