Characteristics of degenerately doped silicon for spectral control in thermophotovoltaic systems [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy, 1995.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:: 50 unnumbered pages : digital, PDF file
Additional Creators:: Knolls Atomic Power Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

Heavily doped Si was investigated for use as spectral control filter in thermal photovoltaic (TPV) system. These filters should reflect radiation at 4 {micro}m and above and transmit radiation at 2 {micro}m and below. Two approaches have been used for introducing impurities into Si to achieve high doping concentration. One was the diffusion technique, using spin-on dopants. The plasma wavelength (λ{sub p}) of these filters could be adjusted by controlling the diffusion conditions. The minimum plasma wavelength achieved was 4.8 {micro}m. In addition, a significant amount of absorption was observed for the wavelength 2 {micro}m and below. The second approach was doping by ion implantation followed by thermal annealing with a capped layer of doped glass. Implantation with high dosage of B and As followed by high temperature annealing (> 1,000 C) resulted in a plasma wavelength that could be controlled between 3.5 and 6 {micro}m. The high temperature annealing (> 1,000 C) that was necessary to activate the dopant atoms and to heal the implantation damage, also caused significant absorption at 2 {micro}m. For phosphorus implanted Si, a moderate temperature (800--900 C) was sufficient to activate most of the phosphorus and to heal the implantation damage. The position of the plasma turn-on wavelength for an implantation dose of 2 × 10¹⁶ cm{sup −2} of P was at 2.9 {micro}m. The absorption at 2 {micro}m was less than 20% and the reflection at 5 {micro}m was about 70%.

Report Numbers:

E 1.99:kapl-p--000011
E 1.99: k--95086
E 1.99:conf-9507247--
conf-9507247--
k--95086
kapl-p--000011

Subject(s):

Direct Energy Conversion

Other Subject(s):

Note:

Published through SciTech Connect.
07/01/1995.
"kapl-p--000011"
" k--95086"
"conf-9507247--"
"DE99002690"
2. NREL conference on thermophotovoltaic generation of electricity, Colorado Springs, CO (United States), Jul 1995.
Brown, E.; Bhat, I.; Freeman, M.; Gutmann, R.; Dzeindziel, R.; Choudhury, N.; Ehsani, H.; Borrego, J.

Funding Information:

AC12-76SN00052

View MARC record | catkey: 14067059