The quantum efficiency of InGaAsSb thermophotovoltaic diodes [electronic resource].
- Published:
- Washington, D.C. : United States. Dept. of Energy, 1997.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Physical Description:
- 7 pages : digital, PDF file
- Additional Creators:
- Knolls Atomic Power Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
Access Online
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Summary:
- Uncoated InGaAsSb/GaSb thermophotovoltaic (TPV) diodes with 0.56 eV (2.2 {micro}m) bandgaps exhibit external quantum efficiencies of 59% at 2 {micro}m, which corresponds to an internal quantum efficiency of 95%. The structures were grown by molecular-beam epitaxy. The devices have electron diffusion lengths as long as 29 {micro}m in 8-{micro}m-wide p-InGaAsSb layers and hole diffusion lengths of 3 {micro}m in 6-{micro}m-wide n-InGaAsSb layers. The electron and hole diffusion lengths appear to increase with increasing p- and n-layer widths, respectively. These excellent minority carrier transport properties of InGaAsSb are well-suited to efficient TPV diode operation.
- Report Numbers:
- E 1.99:kapl-p--000191
E 1.99: k--97116
E 1.99:conf-980103--
conf-980103--
k--97116
kapl-p--000191 - Subject(s):
- Other Subject(s):
- Note:
- Published through SciTech Connect.
10/01/1997.
"kapl-p--000191"
" k--97116"
"conf-980103--"
"DE99001979"
Space technology and applications international forum, Albuquerque, NM (United States), 25-29 Jan 1998.
Connolly, J.C.; Lee, H.; Taylor, G.C.; Martinelli, R.U.; Morris, N.; Garbuzov, D.Z.; Odubanjo, T. - Funding Information:
- AC12-76SN00052
View MARC record | catkey: 14067112