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Structural, optical and electrical properties of WOxNy filmsdeposited by reactive dual magnetron sputtering [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 2006.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Additional Creators
United States. Department of Energy and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Thin films of tungsten oxynitride were prepared by dual magnetron sputtering of tungsten using argon/oxygen/nitrogen gas mixtures with various nitrogen/oxygen ratios. The presence of even small amounts of oxygen had a great effect not only on the composition but on the structure of WOxNy films, as shown by Rutherford backscattering and x-ray diffraction, respectively. Significant incorporation of nitrogen occurred only when the nitrogen partial pressure exceeded 89 percent of the total reactive gas pressure. Sharp changes in the stoichiometry, deposition rate, room temperature resistivity, electrical activation energy and optical band gap were observed when the nitrogen/oxygen ratio was high.The deposition rate increased from 0.31 to 0.89 nm/s, the room temperature resistivity decreased from 1.65 x 108 to 1.82 x 10-2 ?cm, the electrical activation energy decreased from 0.97 to 0.067 eV, and the optical band gap decreased from 3.19 to 2.94 eV upon nitrogen incorporation into the films. WOxNy films were highly transparent as long as the nitrogen incorporation was low, and were brownish (absorbing) and partially reflecting as nitrogen incorporation became significant.
Report Numbers
E 1.99:lbnl--59900
lbnl--59900
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Note
Published through SciTech Connect.
06/05/2006.
"lbnl--59900"
": BT0304030"
Surface and Coatings Technology 201 ISSN 0257-8972; SCTEEJ FT
Anders, Andre; Mohamed, Sodky H.
Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
FulbrightCommission Fellowship
Funding Information
DE-AC02-05CH11231
677616
View MARC record | catkey: 14073228