Actions for Absolute intensities of the vacuum ultraviolet spectra in oxide etch plasma processing discharges [electronic resource].

Email RIS file
Bookmark
Report an Issue

Absolute intensities of the vacuum ultraviolet spectra in oxide etch plasma processing discharges [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 2000.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
41 pages : digital, PDF file
Additional Creators
Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
Access Online

Availability

I Want It
I Want It

Finding items...

Restrictions on Access
Free-to-read Unrestricted online access
Summary
In this paper, the authors report the absolute intensities of ultraviolet light between 4.9 eV and 24 eV ( 250 nm to 50 mn ) striking a silicon wafer in a number of oxide-etch processing discharges. The emphasis is on photons with energies greater than 8.8 eV, which have enough energy to damage SiO₂. These discharges were in an inductively-driven Gaseous Electronics Conference reference cell which had been modified to more closely resemble commercial etching tools. Comparisons of measurements made through a side port in the cell and through a hole in the wafer indicate that the VUV light in these discharges is strongly trapped. For the pure halocarbon gases examined in these experiments (C₂F₆, CHF₃, C₄F₈), the fluxes of VUV photons to the wafer varied from 1 x 10¹⁵ to 3 x 10¹⁵ photons/cm² sec or equivalently from 1.5 to 5 mW/cm². These measurements imply that 0.1% to 0.3% of the rf source power to these discharges ends up hitting the wafer as VUV photons for the typical 20 mT, 200 W rf discharges. For typical ashing discharges containing pure oxygen, the VUV intensities are slightly higher--about 8 mW/cm² . As argon or hydrogen diluents are added to the fluorocarbon gases, the VUV intensities increase dramatically, with a 10/10/10 mixture of Ar/C₂F₆/H₂ yielding VUV fluxes on the wafer 26 mW/cm² and pure argon discharges yielding 52 mW/cm² . Adding an rf bias to the wafer had only a small effect on the VUV observed through a side-port of the GEC cell.
Report Numbers
E 1.99:sand2000-1097j
sand2000-1097j
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
05/01/2000.
"sand2000-1097j"
Journal of Vacuum Science and Technology FT
HAMILTON,THOMAS W.; ARAGON,BEN P.; RILEY,MERLE E.; WOODWORTH,JOSEPH R.; AMATUCCI,VINCENT A.
Funding Information
AC04-94AL85000
View MARC record | catkey: 14073969