Key issues in plasma source ion implantation [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 1996. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 21 pages : digital, PDF file
- Additional Creators:
- Los Alamos National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Plasma source ion implantation (PSII) is a scaleable, non-line-of-sight method for the surface modification of materials. In this paper, we consider three important issues that should be addressed before wide-scale commercialization of PSII: (1) implant conformality; (2) ion sources; and (3) secondary electron emission. To insure uniform implanted dose over complex shapes, the ion sheath thickness must be kept sufficiently small. This criterion places demands on ion sources and pulsed-power supplies. Another limitation to date is the availability of additional ion species beyond B, C, N, and 0. Possible solutions are the use of metal arc vaporization sources and plasma discharges in high-vapor-pressure organometallic precursors. Finally, secondary electron emission presents a potential efficiency and x-ray hazard issue since for many metallurgic applications, the emission coefficient can be as large as 20. Techniques to suppress secondary electron emission are discussed.
- Published through SciTech Connect., 09/01/1996., "la-ur--96-1741", " conf-9605214--1", "DE96011297", Surface coatings and technology conference on ion beam surve technology, Tomsk (Russian Federation), May 1996., and Rej, D.J.; Faehl, R.J.; Matossian, J.N.
- Funding Information:
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