Actions for Recombination Parameters in InGaAsSb Epitaxial Layers for Thermophotovoltaic Applications [electronic resource].

Email RIS file
Bookmark
Report an Issue

Recombination Parameters in InGaAsSb Epitaxial Layers for Thermophotovoltaic Applications [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 2003.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
548 Kilobytes pages : digital, PDF file
Additional Creators
Lockheed Martin, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
Access Online

Availability

I Want It
I Want It

Finding items...

Restrictions on Access
Free-to-read Unrestricted online access
Summary
Radio-frequency (RF) photoreflectance measurements and one-dimensional device simulations have been used to evaluate bulk recombination parameter and surface recombination velocity (SRV) in doubly-capped 0.55 eV, 2 x 10¹⁷ cm⁻³ doped p-InGaAsSb epitaxial layers for thermophotovoltaic (TPV) applications. Bulk lifetimes of 90-100 ns and SRVs of 680 cm/s to 3200 cm/s (depending on the capping layer) are obtained, with higher doping and higher bandgap capping layers most effective in reducing SRV. RF photoreflectance measurements and one-dimensional device simulations are compatible with a radiative recombination coefficient (B) of 3 x 10⁻¹¹ cm³/s and Auger coefficient (C) of 1 x 10⁻²⁸ cm⁶/s.
Report Numbers
E 1.99:lm-03k035
lm-03k035
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
03/17/2003.
"lm-03k035"
C.A. Wang; R.U. Martinelli; G. Nichols; P.S. Dutta; R.J. Kumar; J.J. Gutmann; J.M. Borrego.
Type of Report and Period Covered Note
Topical;
Funding Information
AC12-00SN39357
View MARC record | catkey: 14103922