Actions for Fully Depleted Charge-Coupled Devices [electronic resource].

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Fully Depleted Charge-Coupled Devices [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 2006.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Additional Creators
United States. Department of Energy and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
We have developed fully depleted, back-illuminated CCDs thatbuild upon earlier research and development efforts directed towardstechnology development of silicon-strip detectors used inhigh-energy-physics experiments. The CCDs are fabricated on the same typeof high-resistivity, float-zone-refined silicon that is used for stripdetectors. The use of high-resistivity substrates allows for thickdepletion regions, on the order of 200-300 um, with corresponding highdetection efficiency for near-infrared andsoft x-ray photons. We comparethe fully depleted CCD to thep-i-n diode upon which it is based, anddescribe the use of fully depleted CCDs in astronomical and x-ray imagingapplications.
Report Numbers
E 1.99:lbnl--61468
lbnl--61468
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Note
Published through SciTech Connect.
05/15/2006.
"lbnl--61468"
": KA1503020"
International Symposium on Detector Developmentfor Particle, Astrophysics, and Synchrotron Radiation Experiments(SNIC06), Stanford Linear Accelerator Center, April 3-6,2006.
Holland, Stephen E.
Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
Funding Information
DE-AC02-05CH11231
PS5MSL
View MARC record | catkey: 14106007