Recombination Parameters for Antimonide-Based Semiconductors using RF Photoreflection Techniques [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 2002.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 734 Kilobytes pages : digital, PDF file
- Additional Creators:
- United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- RF photoreflection measurements and PC-1D simulations have been used to evaluate bulk and surface recombination parameters in antimonide-based materials. PC-1D is used to simulate the photoconductivity response of antimonide-based substrates and doubly-capped epitaxial layers and also to determine how to extract the recombination parameters using experimental results. Excellent agreement has been obtained with a first-order model and test structure simulation when Shockley-Reed-Hall (SRH) recombination is the bulk recombination process. When radiative, Auger and surface recombination are included, the simulation results show good agreement with the model. RF photoreflection measurements and simulations using PC-1D are compatible with a radiative recombination coefficient (B) of approximately 5 x 10⁻¹¹ cm³/s, Auger coefficient (C) ≈ 1.0 x 10⁻²⁸ cm⁶/s and surface recombination velocity (SRV) ≈ 600 cm/s for 0.50-0.55 eV doubly-capped InGaAsSb material with GaSb capping layers using the experimentally determined active layer doping of 2 x 10¹⁷ cm⁻³. Photon recycling, neglected in the analysis and simulations presented, will affect the extracted recombination parameters to some extent.
- Published through SciTech Connect.
C.A. Wang; R.U. Martinelli; G. Nichols; P.S. Dutta; R.J. Kumar; R.J. Gutmann; J.M. Borrego.
Lockheed Martin Inc., Schenectady, NY 12301-1072 (US)
- Type of Report and Period Covered Note:
- Funding Information:
View MARC record | catkey: 14106024