Resists for next generation lithography [electronic resource].
- Berkeley, Calif. : Lawrence Berkeley National Laboratory, 2001.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 6 pages : digital, PDF file
- Additional Creators:
- Lawrence Berkeley National Laboratory and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Four Next Generation Lithographic options (EUV, x-ray, EPL, IPL) are compared against four current optical technologies (i-line, DUV, 193 nm, 157 nm) for resolution capabilities based on wavelength. As the wavelength of the incident radiation decreases, the nature of the interaction with the resist changes. At high energies, optical density is less sensitive to molecular structure then at 157 nm.
- Report Numbers:
- E 1.99:lbnl--48981
- Other Subject(s):
- Published through SciTech Connect.
Micro and Nano-Engineering 2001, Grenoble (FR), 09/16/2001--09/19/2001.
Anderson, Erik H.; Brainard, Robert L.; Barclay, George G.; Ocola, Leonidas E.
Shipley Corp BG0113400 (US)
- Funding Information:
View MARC record | catkey: 14106311