Antimonide-Based Long-Wavelength Lasers on GaAs Substrates [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy, 2000.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:: 9 pages : digital, PDF file
Additional Creators:: Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

We have investigated the use of GaAsSb in edge-emitting laser active regions, in order to obtain lasing near 1.3 {micro}m. Single quantum well GaAsSb devices display electroluminescence at wavelengths as long as 1.34 {micro}m, but substantial blueshifts occur under high injection conditions. GaAsSb single quantum well edge emitters have been obtained which lase at 1.275 {micro}m with a room-temperature threshold current density as low as 535 A/cm². Modification of the basic GaAsSb/GaAs structure with the addition of InGaAs layers results in a strongly type-II band alignment which can be used to further extend the emission wavelength of these devices. Using GaAsSb/InGaAs active regions, lasers emitting at 1.17 {micro}m have been obtained with room-temperature threshold current densities of 120 A/cm², and devices operating at 1.29 {micro}m have displayed thresholds as low as 375 A/cm². Characteristic temperatures for devices employing various GaAsSb-based active regions have been measured to be 60-73 K.

Report Numbers:

E 1.99:sand2000-1695c
sand2000-1695c

Subject(s):

Engineering

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Note:

Published through SciTech Connect.
08/17/2000.
"sand2000-1695c"
Electrochemical Society State-of-the-Art Program on Compound Semiconductors, Phoenix, AZ (US), 10/22/2000--10/27/2000.
KLEM,JOHN F.; Blum, O.

Funding Information:

AC04-94AL85000

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