Characteristics of GaAsSb single quantum well lasers emitting near 1.3 {micro}m [electronic resource].
- Published:
- Washington, D.C. : United States. Dept. of Energy, 2000. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 15 pages : digital, PDF file
- Additional Creators:
- Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- Access Online:
- www.osti.gov
- Summary:
- The authors report data on GaAsSb single quantum well lasers grown on GaAs substrates. Room temperature pulsed emission at 1.275 {micro}m in a 1,250 {micro}m-long device has been observed. Minimum threshold current densities of 535 A/cm² were measured in 2000 {micro}m long lasers. The authors also measured internal losses of 2--5 cm{sup −1}, internal quantum efficiencies of 30-38% and characteristic temperature T₀ of 67--77 C. From these parameters a gain constant G₀ of 1,660 cm{sup −1} and a transparency current density J{sub tr} of 134 A/cm² were calculated. The results indicate the potential for fabricating 1.3 {micro}m VCSELs from these materials.
- Subject(s):
- Note:
- Published through SciTech Connect., 02/17/2000., "sand2000-0458j", Photonics Technology Letters FT, and KLEM,JOHN F.; SPAHN,OLGA B.
- Funding Information:
- AC04-94AL85000
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