Inductively Coupled Plasma-Induced Etch Damage of GaN p-n Junctions [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy, 1999.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:: 21 pages : digital, PDF file
Additional Creators:: Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

Plasma-induced etch damage can degrade the electrical and optical performance of III-V nitride electronic and photonic devices. We have investigated the etch-induced damage of an Inductively Coupled Plasma (ICP) etch system on the electrical performance of mesa-isolated GaN pn-junction diodes. GaN p-i-n mesa diodes were formed by Cl₂/BCl₃/Ar ICP etching under different plasma conditions. The reverse leakage current in the mesa diodes showed a strong relationship to chamber pressure, ion energy, and plasma flux. Plasma induced damage was minimized at moderate flux conditions (≤ 500 W), pressures ≥2 mTorr, and at ion energies below approximately -275 V.

Report Numbers:

E 1.99:sand99-2842j
sand99-2842j

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Published through SciTech Connect.
11/03/1999.
"sand99-2842j"
Journal of Vacuum Science and Technology A FT
BACA,ALBERT G.; SHUL,RANDY J.; HAN,JUNG; PEARTON,S.J.; REN,F.; WILLISON,CHRISTI LEE; ZHANG,LEI.

Funding Information:

AC04-94AL85000

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