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ICP etching of GaAs via hole contacts [electronic resource].

Published:
Washington, D.C. : United States. Dept. of Energy, 1996.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:
9 pages : digital, PDF file
Additional Creators:
Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary:
Deep etching of GaAs is a critical process step required for many device applications including fabrication of through-substrate via holes for monolithic microwave integrated circuits (MMICs). Use of high-density plasmas, including inductively coupled plasmas (ICP), offers an alternative approach to etching vias as compared to more conventional parallel plate reactive ion etch systems. This paper reports ICP etching of GaAs vias at etch rates of about 5.3 μm/min with via profiles ranging from highly anistropic to conical.
Report Numbers:
E 1.99:sand--96-1901c
E 1.99: conf-961040--1
conf-961040--1
sand--96-1901c
Subject(s):
Other Subject(s):
Note:
Published through SciTech Connect.
09/01/1996.
"sand--96-1901c"
" conf-961040--1"
"DE96013184"
190. meeting of the Electrochemical Society and technical exhibition, San Antonio, TX (United States), 6-11 Oct 1996.
Briggs, R.D.; McClellan, G.B.; Baca, A.G.; Shul, R.J.; Constantine, C.; Pearton, S.J.
Funding Information:
AC04-94AL85000
View MARC record | catkey: 14108017