Laser micromachining of through via interconnects in active die for 3-D multichip module [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 1995. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 6 pages : digital, PDF file
- Additional Creators:
- Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- One method to increase density in integrated circuits (IC) is to stack die to create a 3-D multichip module (MCM). In the past, special post wafer processing was done to bring interconnects out to the edge of the die. The die were sawed, glued, and stacked. Special processing was done to create interconnects on the edge to provide for interconnects to each of the die. These processes require an IC type fabrication facility (fab) and special processing equipment. In contrast, we have developed packaging assembly methods to created vertical through vias in bond pads of active silicon die, isolate these vias, and metal fill these vias without the use of a special IC fab. These die with through vias can then be joined and stacked to create a 3-D MCM. Vertical through vias in active die are created by laser micromachining using a Nd:YAG laser. Besides the fundamental 1064 nm (infra-red) laser wavelength of a Nd:YAG laser, modifications to our Nd:YAG laser allowed us to generate the second harmonic 532 nm (green) laser wavelength and fourth harmonic 266nm (ultra violet) laser wavelength in laser micromachining for these vias. Experiments were conducted to determine the best laser wavelengths to use for laser micromachining of vertical through vias in order to minimize damage to the active die. Via isolation experiments were done in order to determine the best method in isolating the bond pads of the die. Die thinning techniques were developed to allow for die thickness as thin as 50 μm. This would allow for high 3-D density when the die are stacked. A method was developed to metal fill the vias with solder using a wire bonder with solder wire.
- Published through SciTech Connect., 09/01/1995., "sand--95-0797c", " conf-9510209--1", "DE95017548", 17. IEEE/CHMT international electronics manufacturing technology symposium, Austin, TX (United States), 2-3 Oct 1995., and Miller, W.D.; Chu, D.
- Funding Information:
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