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Vertical cavity surface emitting lasers emitting near 1.5 {mu}m with Sb-based reflectors [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1998.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
8 pages : digital, PDF file
Additional Creators
Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
We describe use of AlAsSb/AlGaAsSb lattice matched to InP for distributed Bragg reflectors. These structures are integral to several surface normal devices, in particular vertical cavity surface emitting lasers. The high refractive index ratio of these materials allows formation of a highly reflective mirror with relatively few mirror pairs. As a result, we have been able to show for the first time the 77K CW operation of an optically pumped, monolithic, all-epitaxial vertical cavity laser, emitting at 1.56 μm.
Report Numbers
E 1.99:sand--98-0691c
E 1.99: conf-980504--
conf-980504--
sand--98-0691c
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
04/01/1998.
"sand--98-0691c"
" conf-980504--"
"DE98003401"
193. meeting of the Electrochemical Society, Inc., San Diego, CA (United States), 3-8 May 1998.
Vawter, G.A.; Klem, J.F.; Blum, O.
Funding Information
AC04-94AL85000
View MARC record | catkey: 14108455