Self-stressing structures for wafer-level oxide breakdown to 200 MHz [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 1995.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 6 pages : digital, PDF file
- Additional Creators:
- Sandia National Laboratories
United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- We have demonstrated for the first time high frequency (210 MHz) oxide breakdown at the wafer-level using on-chip, self-stressing test structures. This is the highest frequency oxide breakdown that has been reported. We used these structures to characterize the variation in oxide breakdown with frequency (from 1 Hz to over 200 MHz) and duty cycle (from 10% to 90%). Since the stress frequency, duty cycle and temperature are controlled by DC signals in these structures, we used conventional DC wafer-level equipment without any special modifications (such as high frequency cabling). This self-stressing structure significantly reduces the cost of performing realistic high frequency oxide breakdown experiments necessary for developing reliability models and building-in-reliability.
- Published through SciTech Connect.
1994 integrated reliability workshop, Lake Tahoe, CA (United States), 16-19 Oct 1994.
Perry, J.P.; Anderson, C.H.; Snyder, E.S.; Tanner, D.M.; Swanson, S.E.; Bowles, M.R.
- Funding Information:
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