Multi-layer enhancement to polysilicon surface-micromachining technology [electronic resource].
- Published
- Washington, D.C. : United States. Dept. of Energy, 1997.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Physical Description
- 5 pages : digital, PDF file
- Additional Creators
- Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
Access Online
- Restrictions on Access
- Free-to-read Unrestricted online access
- Summary
- A multi-level polysilicon surface-micromachining technology consisting of 5 layers of polysilicon is presented. Surface topography and film mechanical stress are the major impediments encountered in the development of a multilayer surface-micromachining process. However, excellent mechanical film characteristics have been obtained through the use of chemical-mechanical polishing for planarization of topography and by proper sequencing of film deposition with thermal anneals. Examples of operating microactuators, geared power-transfer mechanisms, and optical elements demonstrate the mechanical advantages of construction with 5 polysilicon layers.
- Report Numbers
- E 1.99:sand--97-2349c
E 1.99: conf-971207--
conf-971207--
sand--97-2349c - Subject(s)
- Other Subject(s)
- Note
- Published through SciTech Connect.
10/01/1997.
"sand--97-2349c"
" conf-971207--"
"DE98000241"
"DP0102022"
1997 international electron devices meeting, Washington, DC (United States), 7-10 Dec 1997.
Rodgers, M.S.; Sniegowski, J.J. - Funding Information
- AC04-94AL85000
View MARC record | catkey: 14108694