Wet oxidation of AlGaAs vs. AlAs [electronic resource] : A little gallium is good
- Washington, D.C. : United States. Dept. of Energy, 1996. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 4 pages : digital, PDF file
- Additional Creators:
- Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Buried oxides formed from the wet oxidation of AlGaAs alloys, rather than AlAs, are found to be superior in terms of oxidation isotropy, mechanical stability, and strain. It is not surprising that vertical-cavity surface-emitting lasers (VCSELs) using AlGaAs oxide layers as current apertures have shown promising reliability as compared to VCSELs using AlAs layers. Comparisons of lifetime data for VCSELs with differing oxide layers is presented. The beneficial properties of oxides converted from AlGaAs alloys are found to provide robust device processing of reliable VCSELs and may play an important role in other advanced optoelectronic devices.
- Published through SciTech Connect., 12/01/1996., "sand--96-2007c", " conf-961113--5", "DE96014029", Photonics East `96: International Society for Optical Engineering (SPIE) conference and exhibition on photonic sensors and controls for commercial applications, Boston, MA (United States), 19-21 Nov 1996., and Hammons, B.E.; Lear, K.L.; Choquette, K.D.; Hou, H.Q.; Geib, K.M.; Hull, R.; Chui, H.C.; Nevers, J.A.
- Funding Information:
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