Characterization of an oxygen plasma process for cleaning packaged semiconductor devices. Final report [electronic resource].
- Published:
- Washington, D.C. : United States. Dept. of Energy, 1996.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Physical Description:
- 64 pages : digital, PDF file
- Additional Creators:
- United States. Department of Energy and United States. Department of Energy. Office of Scientific and Technical Information
Access Online
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Summary:
- The purpose of this research was to experimentally determine the operating {open_quotes}window{close_quotes} for an oxygen plasma cleaning process to be used on microelectronics components just prior to wire bonding. The process was being developed to replace one that used vapor degreasing with trichlorotrifluoroethane, an ozone-depleting substance. A Box-Behnken experimental design was used to generate data from which the oxygen plasma cleaning process could be characterized. Auger electron spectrophotometry was used to measure the contamination thickness on the dice after cleaning. An empirical equation correlating the contamination thickness on the die surface with the operating parameters of the plasma system was developed from the collected Auger data, and optimum settings for cleaning semiconductor devices were determined. Devices were also tested for undesirable changes in electrical parameters resulting from cleaning in the plasma system. An increase in leakage current occurred for bipolar transistors and diodes after exposure to the oxygen plasma. Although an increase in leakage current occurred, each device`s parameter remained well below the acceptable specification limit. Based upon the experimental results, the optimum settings for the plasma cleaning process were determined to be 200 watts of power applied for five minutes in an enclosure maintained at 0.7 torr. At these settings, all measurable contamination was removed without compromising the reliability of the devices.
- Report Numbers:
- E 1.99:kcp--613-5798
kcp--613-5798 - Subject(s):
- Other Subject(s):
- Note:
- Published through SciTech Connect.
11/01/1996.
"kcp--613-5798"
"DE97050572"
Adams, B.E.
Allied-Signal Aerospace Co., Kansas City, MO (United States). Kansas City Div. - Funding Information:
- AC04-76DP00613
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