Effect of oxidations on phosphorus-diffused crystalline-silicon substrates [electronic resource].

Published: Washington, D.C. : United States. Dept. of Energy, 1996.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description: 3 pages : digital, PDF file
Additional Creators: Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary

Phosphorus diffusions are used in the fabrication process for nearly all crystalline-silicon (c-Si) photovoltaic solar cells to form the emitter of the solar cell. These phosphorous diffusions are also well known to have beneficial gettering benefits, i.e., deleterious metallic impurities are gettered from the bulk of the c-Si substrate into the phosphorous doped layer. In this study, we examined the effect of oxidations performed after the phosphorus diffusion. We were particularly interested in using the oxidation to passivate the surface of the phosphorus diffusion. Post-diffusion oxidations or moderate temperature steps in oxidizing ambients are also commonly found in commercial fabrication sequences of c-Si solar cells. we found that the bulk lifetime was degraded in Czochralski (Cz) silicon due to the post-diffusion oxidation unless there was a gettering agent present during the oxidation. Possible explanations for these results are presented at the end of the paper.

Report Numbers

E 1.99:sand--96-1919c
E 1.99: conf-9608116--1
conf-9608116--1
sand--96-1919c

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Note

Published through SciTech Connect.
09/01/1996.
"sand--96-1919c"
" conf-9608116--1"
"DE96013236"
6. workshop on the role of impurities and defects in silicon device processing, Snowmass, CO (United States), 11-14 Aug 1996.
King, R.R.; Reiss, J.H.; Gee, J.M.; Mitchell, K.W.

Funding Information

AC04-94AL85000

View MARC record | catkey: 14109295