Aminodisilanes as silylating agents for dry-developed positive-tone resists for extreme ultraviolet (13.5) microlithography [electronic resource].

Published: Washington, D.C. : United States. Dept. of Energy, 1996.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description: 2 pages : digital, PDF file
Additional Creators: Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary

We recently described a near-surface imaging scheme that employs disilanes and a bilayer resist scheme which together dramatically improve silicon contrast. A relatively thin 0.25 to 0.1 μm imaging layer of a chemically amplified photo-crosslinking resist (Shipley XP-8844 or XP-9472) is spin coated on top of a thicker (0.25-0.5 μm) layer of hard-baked resist (such as Shipley MP-1807). This bilayer scheme improves silicon contrast and provides additional advantages such as providing a planarizing layer and a processing layer.

Report Numbers

E 1.99:sand--96-0333c
E 1.99: conf-960590--1
conf-960590--1
sand--96-0333c

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Note

Published through SciTech Connect.
02/01/1996.
"sand--96-0333c"
" conf-960590--1"
"DE96005899"
Optical Society of America (OSA) topical meeting on extreme ultraviolet lithography, Boston, MA (United States), 1-3 May 1996.
Wheeler, D.; Henderson, C.; Kubiak, G.; Ray-Chadhuri, A.

Funding Information

AC04-94AL85000

View MARC record | catkey: 14109563