Actions for Redistribution of Implanted Dopants in GaN [electronic resource].

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Redistribution of Implanted Dopants in GaN [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1998.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Additional Creators
Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Donor (S, Se and Te) and acceptor (Mg, Be and C) dopants have been implanted into GaN at doses of 3-5x1014 cm-2 and annealed at temperatures up to 1450 *C. No redistribution of any of the elements is detectable by Secondary Ion Mass Spectrometry, except for Be, which displays an apparent damage-assisted diffusion at 900 "C. At higher temperatures there is no further movement of the Be, suggesting that the point defect flux that assists motion at lower temperatures has been annealed. Effective diffusivities are <2X 1013 cm2.sec-1 at 1450 `C for each of the dopants in GaN.
Report Numbers
E 1.99:sand98-2591j
sand98-2591j
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Note
Published through SciTech Connect.
11/20/1998.
"sand98-2591j"
"DE00001957"
Journal of Electronic Materials FT
Wilson, R.G.; Han, J.; Singh, R.K.; Zolper, J.C.; Shul, R.J.; Rieger, D.J.; Pearton, S.J.; Fu, M.; Gao, X.A.; Scarvepalli, V. Sekhar, J.A.; Zavada, J.M.
Funding Information
AC04-94AL85000
View MARC record | catkey: 14109875