Actions for MOCVD growth of AlGaN UV LEDs [electronic resource].

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MOCVD growth of AlGaN UV LEDs [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1998.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
7 pages : digital, PDF file
Additional Creators
Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Issues related to the MOCVD growth of AlGaN, specifically the gas-phase parasitic reactions among TMG, TMA, and NH₃, are studied using an in-situ optical reflectometer. It is observed that the presence of the well-known gas phase adduct (TMA: NH₃) could seriously hinder the incorporation behavior of TMGa. Relatively low reactor pressures (30--50 Torr) are employed to grow an AlGaN/GaN SCH QW p-n diode structure. The UV emission at 360 nm (FWHM ∼ 10 nm) represents the first report of LED operation from an indium-free GaN QW diode.
Report Numbers
E 1.99:sand--98-1399c
E 1.99: conf-980729--
conf-980729--
sand--98-1399c
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
09/01/1998.
"sand--98-1399c"
" conf-980729--"
"DE98005911"
"DP0102011"
SPIE photonics Taiwan `98, Taipei (Taiwan, Province of China), 9-11 Jul 1998.
Crawford, M.H.; Han, J.
Funding Information
AC04-94AL85000
View MARC record | catkey: 14109997