Actions for Novel mid-infrared lasers with compressively strained InAsSb active regions [electronic resource].

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Novel mid-infrared lasers with compressively strained InAsSb active regions [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1997.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
8 pages : digital, PDF file
Additional Creators
Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Mid-infrared lasers grown by MOCVD with AlAsSb claddings and strained InAsSb active regions are reported. A 3.8--3.9 {micro}m injection laser with a pseudomorphic InAsSb multiple quantum well active region lased at 210 K under pulsed operation. A semi-metal layer acts as an internal electron source for the injection laser. An optically pumped laser with an InAsSb/InAsP strained-layer superlattice active region was demonstrated at 3.7 {micro}m, 240 K.
Report Numbers
E 1.99:sand--97-0113c
E 1.99: conf-961202--24
conf-961202--24
sand--97-0113c
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
02/01/1997.
"sand--97-0113c"
" conf-961202--24"
"DE97002462"
1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996.
Kurtz, S.R.; Biefeld, R.M.; Allerman, A.A.
Funding Information
AC04-94AL85000
View MARC record | catkey: 14110841