Changes in electrical device characteristics during the formation of dislocations in situ in the TEM [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 1993. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 4 pages : digital, PDF file
- Additional Creators:
- Lawrence Berkeley National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- By adding electrical connections to a specimen heating holder for a transmission electron microscope, we have measured the characteristics of electronic devices such as diodes while they remain under observation in the microscope. We have made electron-transparent specimens from metastable GeSi/Si p-n junction diodes and introduced dislocations by heating in situ. The combination of electrical measurement and real-time observation of dislocation formation allows us to examine the electrical properties of dislocations in individual devices and the influence of defects on device performance.
- Published through SciTech Connect., 03/01/1993., "lbl--33886", " conf-9304150--1", "DE93013910", 8. conference on microscopy of semiconducting materials,Oxford (United Kingdom),5-8 Apr 1993., and King, C.A.; Ross, F.M.; Bean, J.C.; Hull, R.; Bahnck, D.; Peticolas, L.J.; Kola, R.R.
- Funding Information:
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